Madrid – A new initiative led by Spanish technology firm Indra Group aims to bolster the nation’s capabilities in advanced semiconductor technology, specifically focusing on gallium nitride (GaN). The project, dubbed GIGaNTE (Iniciativa de Investigación en Tecnologías de Nitruro de Galio y Tecnologías de Empaquetado Avanzado), represents a significant investment in Spain’s technological sovereignty and its position within the European defense and communications landscape. This development comes at a crucial time, as global supply chains for semiconductors remain vulnerable and strategic autonomy becomes increasingly important for nations worldwide.
GaN, a wide bandgap semiconductor, is rapidly gaining prominence due to its superior performance characteristics compared to traditional silicon-based materials. It allows for the creation of more powerful and efficient devices, particularly in applications demanding high frequencies and power handling, such as radar systems, high-speed communications, and power electronics. The GIGaNTE project seeks to establish a complete value chain within Spain, encompassing the design, fabrication, integration, and validation of GaN-based technologies. This comprehensive approach is intended to reduce reliance on foreign suppliers and foster innovation within the domestic technology sector.
Launched in January 2026, the GIGaNTE project is backed by over nine million euros in funding and is slated to run for four years. It operates under the umbrella of the Spanish Ministry of Science, Innovation and Universities’ Missions Program for Science and Innovation (PEICTI 2024–2027), managed through the Centre for the Development of Industrial Technology (CDTI). CDTI plays a vital role in supporting technological development and innovation in Spain. The project’s overarching goal is to integrate Spain into the future European value chain for compound semiconductors, a sector deemed strategically critical.
Building a National GaN Ecosystem
Indra Group is spearheading a consortium that includes key players in the Spanish technology ecosystem. Televes Corporación, SPARC Foundry, and RBZ Robot Design are contributing their expertise in advanced electronics, integrated circuit design, and scalable manufacturing platforms. Collaboration extends to academic institutions, with research teams from the Universidad Politécnica de Madrid, the Universidad de Vigo, the Universidad de Salamanca, and the Centro Tecnológico de las Telecomunicaciones de Galicia (GRADIANT) providing specialized research in GaN architectures, device characterization, and circuit integration. This collaborative effort aims to leverage the strengths of both industry and academia to accelerate innovation and drive technological advancements.
“Gallium nitride is poised to transform the next generation of defense and communications systems, and leading a project like GIGaNTE clearly demonstrates Indra Group’s commitment to developing critical technological capabilities from Spain,” stated Joaquín Ponz, Head of Portfolio and Innovation at Indra Group. “Taking on the coordination of this strategic initiative allows us to drive an industrial and scientific ecosystem of the highest level and advance towards much more powerful, efficient, and reliable radar, electronic warfare, and communications systems. Having the ability to develop and produce it in Spain is essential to strengthen technological sovereignty and the competitiveness of our industry at a time when Europe needs to have its own solutions to reinforce strategic autonomy.”
Sovereignty and Strategic Importance
The GIGaNTE project is not occurring in a vacuum. It’s part of a broader European push to enhance semiconductor independence. Concerns over supply chain vulnerabilities, exacerbated by geopolitical tensions and the COVID-19 pandemic, have prompted governments across the continent to invest heavily in domestic chip manufacturing capabilities. The European Union has set ambitious goals for increasing its share of global semiconductor production, aiming to double its market share to 20% by 2030. The European Chip Act, proposed in 2023, outlines a comprehensive strategy to achieve this goal through substantial public and private investment.
Spain’s participation in this broader European effort is exemplified by Indra Group’s parallel investment through SPARC Foundry. Indra holds a majority stake (37%) in SPARC Foundry, a company focused on designing and producing chips based on gallium nitride and other III-V technologies. In June 2025, Indra announced its increased investment in SPARC, positioning it as a key player in Europe’s ambitions in photonics and radiofrequency semiconductors. This strategic move underscores Indra’s commitment to building a robust domestic semiconductor industry.
A New GaN Fabrication Facility
Further solidifying its commitment, Indra initiated the construction of Spain’s first GaN chip factory in Vigo in January 2026. This pioneering facility is designed to enhance technological sovereignty and serve as a foundation for advanced systems in defense, and aerospace. The factory will be instrumental in developing the manufacturing capabilities required by the GIGaNTE project and will be integrated into SPARC Foundry’s technological platform. The establishment of this facility represents a significant step towards creating a fully integrated semiconductor ecosystem within Spain.
The fabrication process itself will focus on developing high-performance electronic devices and circuits capable of operating at demanding frequencies. This includes the development of specialized integrated circuits (MMICs) and advanced integration and packaging techniques to facilitate their incorporation into compact, reliable, and efficient modules and antennas. The project aims to overcome existing limitations in GaN technology and push the boundaries of performance and efficiency.
Impact on Defense and Communications
The implications of the GIGaNTE project extend far beyond the semiconductor industry. The advancements in GaN technology are expected to have a transformative impact on defense and communications systems. GaN-based radar systems offer improved detection range, resolution, and electronic counter-countermeasure capabilities. In communications, GaN enables higher data rates, lower latency, and increased energy efficiency. These improvements are crucial for modernizing military infrastructure and enhancing national security.
the project is expected to create high-skilled jobs and stimulate economic growth within Spain. The development of a domestic semiconductor industry will reduce reliance on foreign suppliers, strengthen the country’s technological base, and enhance its competitiveness in the global market. The GIGaNTE project is not merely a technological endeavor; it is a strategic investment in Spain’s future economic and security interests.
Looking Ahead
The successful completion of the GIGaNTE project will mark a pivotal moment for Spain’s technological landscape. The establishment of a fully integrated GaN value chain will position the country as a key player in the European semiconductor industry and enhance its strategic autonomy. The project’s impact will be felt across multiple sectors, from defense and communications to aerospace and energy.
The next key milestone for the GIGaNTE project is the completion of the GaN chip fabrication facility in Vigo, currently slated for late 2027. This facility will be crucial for translating research and development efforts into tangible products and establishing a sustainable manufacturing base. Continued collaboration between industry, academia, and government will be essential to ensure the project’s long-term success and maximize its impact on the Spanish economy and national security. Readers are encouraged to share their thoughts and perspectives on this important initiative in the comments below.